SMBT3906U pnp silicon switching transistor array high dc current gain: 0.1ma to 100ma low collector-emitter saturation voltage two ( galvanic) internal isolated transistors with good matching in one package complementary type: smbt3904u (npn) vpw09197 1 2 3 4 5 6 eha07175 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package SMBT3906U s2a 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sc74 maximum ratings unit parameter symbol value collector-emitter voltage v ceo v 40 40 collector-base voltage v cbo emitter-base voltage 5 v ebo dc collector current i c ma 200 330 mw total power dissipation , t s = 105 c p tot c t j junction temperature 150 storage temperature t st g -65 ... 150 thermal resistance junction - soldering point 1) r thjs 135 k/w 1 for calculation of r thja please refer to application note thermal resistance product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics at t a =25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 40 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 40 - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - - 50 na dc current gain 1) i c = 100 a, v ce = 1 v i c = 1 ma, v ce = 1 v i c = 10 ma, v ce = 1 v i c = 50 ma, v ce = 1 v i c = 100 ma, v ce = 1 v h fe 60 80 100 60 30 - - - - - - - 300 - - - collector-emitter saturation voltage1) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v cesat - - - - 0.25 0.4 v base-emitter saturation voltage 1) i c = 10 ma, i b = 1 ma i c = 50 ma, i b = 5 ma v besat 0.65 - - - 0.85 0.95 1) pulse test: t < 300 s; d < 2% SMBT3906U product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. typ. min. ac characteristics f t 250 - mhz - transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz c cb - - collector-base capacitance v cb = 10 v, f = 1 mhz pf 4.5 c eb - - 10 emitter-base capacitance v eb = 0.5 v, f = 1 mhz h 11e 2 12 - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz k h 12e 0.1 10 10 -4 - open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h 21e 100 - short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz - 400 h 22e 3 - 60 s open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz noise figure i c = 100 a, v ce = 5 v, r s = 1 k , f = 1 khz, f = 200 hz f - - 4 db delay time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t d - - 35 ns rise time v cc = 3 v, i c = 10 ma, i b1 = 1 ma, v be(off) = 0.5 v t r - - 35 storage time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t stg - - 225 fall time v cc = 3 v, i c = 10 ma, i b1 = i b2 = 1ma t f - - 75 SMBT3906U product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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